Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14868852Application Date: 2015-09-29
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Publication No.: US09536813B2Publication Date: 2017-01-03
- Inventor: Masato Hatano
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2013-219595 20131022
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00

Abstract:
A semiconductor device includes: a semiconductor chip, and a lead frame. The semiconductor chip is mounted over a die pad. Four suspension leads are connected with the die pad and at least one of them is provided between first and second lead groups and is deformed to protrude toward the first lead group. At least one of the leads of the second lead group which is nearer to the deformed suspension lead is deformed to be apart from remaining leads of the second lead group.
Public/Granted literature
- US20160020162A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-01-21
Information query
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