Invention Grant
US09536786B2 Wafer processing method using pulsed laser beam to form shield tunnels along division lines of a semiconductor wafer
有权
使用脉冲激光束的晶片处理方法沿着半导体晶片的分割线形成屏蔽通道
- Patent Title: Wafer processing method using pulsed laser beam to form shield tunnels along division lines of a semiconductor wafer
- Patent Title (中): 使用脉冲激光束的晶片处理方法沿着半导体晶片的分割线形成屏蔽通道
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Application No.: US14926308Application Date: 2015-10-29
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Publication No.: US09536786B2Publication Date: 2017-01-03
- Inventor: Hiroshi Morikazu , Motohiko Shimada
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain Ltd.
- Priority: JP2014-225470 20141105
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/268 ; H01L21/683 ; H01L21/786 ; H01L21/784 ; H01L21/67 ; H01S3/10
Abstract:
A wafer is formed with a plurality of division lines on a front surface of a single crystal substrate having an off angle and formed with devices in a plurality of regions partitioned by the division lines. The wafer is processed by setting a numerical aperture (NA) of a focusing lens for focusing a pulsed laser beam so that a value obtained by dividing the numerical aperture (NA) by a refractive index (N) of the single crystal substrate falls within the range from 0.05 to 0.2. The pulsed laser beam is applied along the division lines, with a focal point of the pulsed laser beam positioned at a desired position from a back surface of the single crystal substrate, so as to form shield tunnels each composed of a pore and a pore-shielding amorphous portion along the division lines from the focal point positioned inside the single crystal substrate.
Public/Granted literature
- US20160126138A1 WAFER PROCESSING METHOD Public/Granted day:2016-05-05
Information query
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