Invention Grant
- Patent Title: Tungsten film forming method, semiconductor device manufacturing method, and storage medium
- Patent Title (中): 钨膜形成方法，半导体器件制造方法和存储介质
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Application No.: US14664945Application Date: 2015-03-23
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Publication No.: US09536782B2Publication Date: 2017-01-03
- Inventor: Takanobu Hotta , Yasushi Aiba , Koji Maekawa
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2014-061929 20140325; JP2015-012922 20150127
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; C23C16/08 ; C23C16/455 ; C23C16/46 ; H01L21/3205 ; C23C16/14 ; H01L21/285
Abstract:
A tungsten film forming method includes: supplying a tungsten chloride gas as a source material of tungsten and a reducing gas towards a substrate to be processed under a depressurized atmosphere to cause reaction between the tungsten chloride gas and the reducing gas while heating the substrate to be processed, such that a main tungsten film is directly formed on a surface of the substrate to be processed without forming an initial tungsten film for nucleus generation.
Public/Granted literature
- US20150279735A1 Tungsten Film Forming Method, Semiconductor Device Manufacturing Method, and Storage Medium Public/Granted day:2015-10-01
Information query
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