Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14988013Application Date: 2016-01-05
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Publication No.: US09536776B2Publication Date: 2017-01-03
- Inventor: Tatsunori Murata , Takahiro Maruyama
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2014-009013 20140121
- Main IPC: H01L21/764
- IPC: H01L21/764 ; H01L21/02 ; H01L21/762
Abstract:
An object of the invention is to provide a semiconductor device having improved performance. A method of manufacturing a semiconductor device includes: forming a trench and then forming a first insulating film made of a silicon oxide film through CVD using a gas containing an O3 gas and a TEOS gas to cover the side surface of the trench with the insulating film; forming a second insulating film made of a silicon oxide film through PECVD to cover the side surface of the trench with the second insulating film via the first insulating film; and forming a third insulating film made of a silicon oxide film through CVD using a gas containing an O3 gas and a TEOS gas to close the trench with the third insulating film while leaving a space in the trench.
Public/Granted literature
- US20160133507A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2016-05-12
Information query
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