Ion energy control by RF pulse shape

Invention Grant

US09536749B2 Ion energy control by RF pulse shape 有权

Title translation: 离子能量由RF脉冲形状控制

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Patent Title: Ion energy control by RF pulse shape
Patent Title (中): 离子能量由RF脉冲形状控制
Application No.: US14570859

Application Date: 2014-12-15
Publication No.: US09536749B2

Publication Date: 2017-01-03
Inventor: Alexei Marakhtanov , Zhigang Chen , John Patrick Holland
Applicant: Lam Research Corporation
Applicant Address: US CA Fremont
Assignee: Lam Research Corporation
Current Assignee: Lam Research Corporation
Current Assignee Address: US CA Fremont
Agency: Martine Penilla Group, LLP
Main IPC: H01L21/3065
IPC: H01L21/3065 ; H01L21/67 ; H01J37/32

Abstract:

A method for slope control of ion energy is described. The method includes receiving a setting indicating that an etch operation is to be performed using a radio frequency (RF) pulse signal. The RF pulse signal includes a first state and a second state. The first state has a higher power level than the second state. The method further includes receiving a pulse slope associated with the RF pulse signal. The pulse slope provides a transition between the first state and the second state. Also, the pulse slope is other than substantially infinite for reducing an amount of ion energy during the etch operation. The method includes determining power levels and timings for achieving the pulse slope and sending the power levels and the timings to an RF generator to generate the RF pulse signal.

Abstract(Chinese):

描述了一种用于离子能量斜率控制的方法。该方法包括接收指示使用射频（RF）脉冲信号执行蚀刻操作的设置。 RF脉冲信号包括第一状态和第二状态。第一状态具有比第二状态更高的功率水平。该方法还包括接收与RF脉冲信号相关联的脉冲斜率。脉冲斜率提供了在第一状态和第二状态之间的转变。此外，脉冲斜率不是基本上无限的，用于在蚀刻操作期间减少离子能量。该方法包括确定用于实现脉冲斜率的功率电平和定时，并将功率电平和定时发送到RF发生器以产生RF脉冲信号。

Public/Granted literature

US20160172216A1 Ion Energy Control By RF Pulse Shape Public/Granted day:2016-06-16

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065	.......等离子腐蚀；活性离子腐蚀