Invention Grant
- Patent Title: Increasing the doping efficiency during proton irradiation
- Patent Title (中): 在质子照射期间提高掺杂效率
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Application No.: US14703684Application Date: 2015-05-04
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Publication No.: US09536740B2Publication Date: 2017-01-03
- Inventor: Hans-Joachim Schulze , Johannes Laven , Franz Josef Niedernostheide , Frank Dieter Pfirsch
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Shumaker & Sieffert, P.A.
- Priority: DE102012020785 20121023
- Main IPC: H01L21/22
- IPC: H01L21/22 ; H01L21/265 ; H01L21/26 ; H01L21/324 ; H01L21/02
Abstract:
A description is given of a method for doping a semiconductor body, and a semiconductor body produced by such a method. The method comprises irradiating the semiconductor body with protons and irradiating the semiconductor body with electrons. After the process of irradiating with protons and after the process of irradiating with electrons, the semiconductor body is subjected to heat treatment in order to attach the protons to vacancies by means of diffusion.
Public/Granted literature
- US20150235853A1 INCREASING THE DOPING EFFICIENCY DURING PROTON IRRADIATION Public/Granted day:2015-08-20
Information query
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