Invention Grant
US09536708B2 Plasma generating device, method of controlling the same, and substrate processing device including the plasma generating device
有权
等离子体发生装置及其控制方法，以及包括等离子体发生装置的基板处理装置
- Patent Title: Plasma generating device, method of controlling the same, and substrate processing device including the plasma generating device
- Patent Title (中): 等离子体发生装置及其控制方法，以及包括等离子体发生装置的基板处理装置
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Application No.: US14227449Application Date: 2014-03-27
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Publication No.: US09536708B2Publication Date: 2017-01-03
- Inventor: Hee Sun Chae , Jeong Hee Cho , Jong Sik Lee , Han Saem Rhee , Hyun Jun Kim
- Applicant: PSK INC.
- Applicant Address: KR Gyeonggi-Do
- Assignee: PSK Inc.
- Current Assignee: PSK Inc.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0046076 20130425
- Main IPC: H01J37/32
- IPC: H01J37/32
Abstract:
Provided is a plasma generating device. The plasma generating device includes: an RF power supply providing an RF signal; a plasma chamber providing a space where gas is injected to generate plasma; a first electromagnetic inducer installed at one portion of the plasma chamber and inducing an electromagnetic field in the plasma chamber as the RF signal is applied; a second electromagnetic inducer installed at another portion of the plasma chamber and inducing an electromagnetic field in the plasma chamber as the RF signal is applied; a first load connected to the first electromagnetic inducer; a second load connected to the second electromagnetic inducer; and a controller controlling a power supplied to the first electromagnetic inducer and the second electromagnetic inducer by adjusting at least one impedance of the first load and the second load.
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