Invention Grant
US09536601B2 Threshold voltage grouping of memory cells in same threshold voltage range
有权
在相同阈值电压范围内的存储器单元的阈值电压分组
- Patent Title: Threshold voltage grouping of memory cells in same threshold voltage range
- Patent Title (中): 在相同阈值电压范围内的存储器单元的阈值电压分组
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Application No.: US14533936Application Date: 2014-11-05
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Publication No.: US09536601B2Publication Date: 2017-01-03
- Inventor: Chung-Kuang Chen , Han-Sung Chen , Chun-Hsiung Hung
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C11/56 ; G11C16/10 ; G11C16/34
Abstract:
A memory cell undergoing programming is determined as belonging to a particular one of a plurality of second threshold voltage ranges that divide a present threshold voltage range of the particular memory cell. Programming pulses are applied to program the particular memory cell to within the target threshold voltage range. At least one of a program voltage and a total duration of the programming pulses applied to the particular memory cell is varied, depending on the particular second threshold voltage range of the memory cell.
Public/Granted literature
- US20160125922A1 THRESHOLD VOLTAGE GROUPING OF MEMORY CELLS IN SAME THRESHOLD VOLTAGE RANGE Public/Granted day:2016-05-05
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