Invention Grant
- Patent Title: Method for forming dense silicic film
- Patent Title (中): 形成致密硅膜的方法
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Application No.: US14430740Application Date: 2013-10-09
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Publication No.: US09534145B2Publication Date: 2017-01-03
- Inventor: Yuki Ozaki , Takaaki Sakurai , Masakazu Kobayashi
- Applicant: Yuki Ozaki , Takaaki Sakurai , Masakazu Kobayashi
- Agent Mitchell Brustein
- Priority: JP2012-226078 20121011
- International Application: PCT/JP2013/077487 WO 20131009
- International Announcement: WO2014/057980 WO 20140417
- Main IPC: B05D3/06
- IPC: B05D3/06 ; C09D183/16 ; C08J7/04 ; C08J7/12 ; C23C18/12 ; C23C18/14 ; C01B21/068 ; C08J7/00
Abstract:
The present invention provides a dense silicic film and a producing method thereof. This method comprises coating a composition for coating film, which comprises a polymer having a silazane bond on a substrate, on a substrate, irradiating with light having a maximal peak in the range of 160-179 nm wavelength, and then irradiating with light having 10-70 nm wavelength longer maximal peak wavelength than the light used in the previous irradiation.
Public/Granted literature
- US20150252222A1 METHOD FOR FORMING DENSE SILICIC FILM Public/Granted day:2015-09-10
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