Invention Grant
- Patent Title: PIN diode circuit and PIN diode attenuator
- Patent Title (中): PIN二极管电路和PIN二极管衰减器
-
Application No.: US14649325Application Date: 2012-12-03
-
Publication No.: US09438198B2Publication Date: 2016-09-06
- Inventor: Honglei Sun
- Applicant: TELEFONAKTIEBOLAGET L M ERICSSON (PUBL)
- Applicant Address: SE Stockholm
- Assignee: Telefonaktiebolaget L M Ericsson (publ)
- Current Assignee: Telefonaktiebolaget L M Ericsson (publ)
- Current Assignee Address: SE Stockholm
- International Application: PCT/CN2012/085743 WO 20121203
- International Announcement: WO2014/085960 WO 20140612
- Main IPC: H01P1/22
- IPC: H01P1/22 ; H03H7/25

Abstract:
A PIN diode circuit comprising a RF input coupled to a first junction point via a first DC blocking circuit and a constant voltage source coupled to the first junction point via a first DC feeding circuit, the constant voltage source configured to DC bias the first junction point. The PIN diode circuit further comprises a first PIN diode with an anode coupled to the first junction point and a cathode coupled to an anode of a second PIN diode via a second DC blocking circuit. The cathode of the second PIN diode is configured to be coupled to ground potential. The PIN diode circuit further comprises an adjustable voltage source coupled to a second junction point via a second DC feeding circuit. The second junction point is coupled to the cathode of the first PIN diode via a first resistor and is further coupled to the anode of the second PIN diode via a second resistor.
Public/Granted literature
- US20150333723A1 PIN DIODE CIRCUIT AND PIN DIODE ATTENUATOR Public/Granted day:2015-11-19
Information query