Invention Grant
- Patent Title: Low noise amplifier
- Patent Title (中): 低噪声放大器
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Application No.: US14256191Application Date: 2014-04-18
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Publication No.: US09438176B2Publication Date: 2016-09-06
- Inventor: Junyoung Jang , Honggul Han , Tae Wook Kim
- Applicant: Industry-Academic Cooperation Foundation, Yonsei University
- Applicant Address: KR Seoul
- Assignee: Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee: Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee Address: KR Seoul
- Agency: Carter, DeLuca, Farrell & Schmidt, LLP
- Priority: KR10-2013-0043593 20130419
- Main IPC: H03F3/45
- IPC: H03F3/45 ; H03F1/26 ; H03F1/32
Abstract:
Provided is a low noise amplifier. The low noise amplifier includes an input transistor receiving and amplifying a signal, an output transistor amplifying the signal amplified by the input transistor, and an inverting unit inverting the signal which is amplified by the input transistor and applying the inverted signal to a gate of the output transistor.
Public/Granted literature
- US20140312973A1 LOW NOISE AMPLIFIER Public/Granted day:2014-10-23
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