Invention Grant
- Patent Title: Bias voltage generating circuit and switching power supply thereof
- Patent Title (中): 偏置电压发生电路及其开关电源
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Application No.: US14186166Application Date: 2014-02-21
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Publication No.: US09438108B2Publication Date: 2016-09-06
- Inventor: Wei Chen
- Applicant: Silergy Semiconductor Technology (Hangzhou) LTD
- Applicant Address: CN Hangzhou
- Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
- Current Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
- Current Assignee Address: CN Hangzhou
- Agent Michael C. Stephens, Jr.
- Priority: CN201210341512 20120914
- Main IPC: H02M3/04
- IPC: H02M3/04 ; H02M3/156 ; G05F1/46 ; H02M3/335 ; H02M7/217 ; H02M1/08 ; H02M3/158 ; H02M1/00

Abstract:
Disclosed herein are bias voltage generating circuits configured for switching power supplies, and associated control methods. In one embodiment, a bias voltage generating circuit can include: (i) a first control circuit configured to compare a drain-source voltage of a switch against a bias voltage; (ii) a capacitor, with the bias voltage across the capacitor; (iii) a second control circuit configured to control the switch, and that is enabled when the bias voltage is at least as high as an expected bias voltage; (iv) the first control circuit being configured to control the capacitor to charge when the drain-source voltage of the switch is greater than the bias voltage; and (v) the bias voltage being less than an overvoltage protection voltage when the capacitor charges, and where the overvoltage protection voltage comprises a voltage that is a predetermined amount higher than the expected bias voltage.
Public/Granted literature
- US20140169043A1 BIAS VOLTAGE GENERATING CIRCUIT AND SWITCHING POWER SUPPLY THEREOF Public/Granted day:2014-06-19
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