Invention Grant
- Patent Title: Silicon-on-insulator-based voltage generation circuit
- Patent Title (中): 基于硅绝缘体的电压产生电路
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Application No.: US14747711Application Date: 2015-06-23
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Publication No.: US09438105B2Publication Date: 2016-09-06
- Inventor: Yang Li , Yaohui Guo , Jian Sun
- Applicant: SMARTER MICROELECTRONICS (GUANG ZHOU) CO., LTD.
- Applicant Address: CN Guangzhou
- Assignee: SMARTER MICROELECTRONICS (GUANG ZHOU) CO., LTD.
- Current Assignee: SMARTER MICROELECTRONICS (GUANG ZHOU) CO., LTD.
- Current Assignee Address: CN Guangzhou
- Agency: Syncoda LLC
- Agent Feng Ma; Junjie Feng
- Priority: CN201210255507 20120723
- Main IPC: H02M3/07
- IPC: H02M3/07 ; G05F3/20

Abstract:
A silicon-on-insulator (SOI) based positive/negative voltage generation circuit includes: an inverter including an NMOS transistor and a PMOS transistor, a first transfer capacitor coupled to the PMOS transistor, a first output capacitor, a second transfer capacitor coupled to the NMOS transistor, a second output capacitor, a first diode disposed between the first transfer capacitor and the first output capacitor, a second diode disposed between the second transfer capacitor and the second output capacitor, one end of the first output capacitor is coupled to the ground, one end of the second output capacitor is coupled to the ground; wherein an output voltage of the inverter is controlled by a single-phase clock to flip periodically, charge the first transfer capacitor through a parasitic diode of the PMOS transistor, and charge the second transfer capacitor through a parasitic diode of the NMOS transistor.
Public/Granted literature
- US20150295492A1 SILICON-ON-INSULATOR-BASED VOLTAGE GENERATION CIRCUIT Public/Granted day:2015-10-15
Information query
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