Invention Grant
- Patent Title: Piezoelectric thin film element
- Patent Title (中): 压电薄膜元件
-
Application No.: US14053902Application Date: 2013-10-15
-
Publication No.: US09437805B2Publication Date: 2016-09-06
- Inventor: Hiroshi Shiraki
- Applicant: MURATA MANUFACTURING CO., LTD.
- Applicant Address: JP Nagaokakyo-Shi, Kyoto-Fu
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Nagaokakyo-Shi, Kyoto-Fu
- Agency: Arent Fox LLP
- Priority: JP2011-090566 20110415; JP2011-264342 20111202
- Main IPC: H01L41/18
- IPC: H01L41/18 ; H01L41/16 ; C04B35/495 ; H01L41/08 ; H01L41/187 ; H01L41/317 ; C23C18/12

Abstract:
A piezoelectric thin film element that includes a substrate, a lower electrode on the substrate, a piezoelectric film on the lower electrode, and an upper electrode on the piezoelectric film. The piezoelectric film is a potassium sodium niobate film represented, as its main constituent, by the general formula (1−n)(K1-xNax)NbyO3-nM1M2O3 in which M1 is any one of Ca, Sr, and Ba, and M2 is Zr, and x, y, and n respectively are within the ranges of: 0.25≦x≦1.00; 0.85≦y≦1.10; and 0.01≦n≦0.10. Alternatively, M2 is any one of Sn and Hf, and x, y, and n respectively are within the ranges of: 0.25≦x≦1.00; 0.90≦y≦1.05; and 0.01≦n≦0.10.
Public/Granted literature
- US20140049138A1 PIEZOELECTRIC THIN FILM ELEMENT Public/Granted day:2014-02-20
Information query
IPC分类: