Invention Grant
- Patent Title: Non-volatile memory device including charge trapping layer and method for fabricating the same
- Patent Title (中): 包括电荷俘获层的非易失性存储器件及其制造方法
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Application No.: US14555040Application Date: 2014-11-26
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Publication No.: US09437751B2Publication Date: 2016-09-06
- Inventor: Jun-Hyung Kim
- Applicant: SK INNOVATION CO., LTD.
- Applicant Address: KR Seoul
- Assignee: SK INNOVATION CO., LTD.
- Current Assignee: SK INNOVATION CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: I P & T Group LLP
- Priority: KR10-2013-0159747 20131219
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/792 ; H01L21/28 ; H01L29/423 ; H01L21/02 ; H01L29/51 ; H01L29/66
Abstract:
A non-volatile memory device includes a charge trapping layer for trapping charges. The charge trapping layer includes a linker layer formed over a substrate and including linkers to be bonded to metal ions metallic nanoparticles formed out of the metal ions over the linker layer and a nitride filling gaps between the metallic nanoparticles.
Public/Granted literature
- US20150179819A1 NON-VOLATILE MEMORY DEVICE INCLUDING CHARGE TRAPPING LAYER AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-06-25
Information query
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