In a non-volatile semiconductor memory device, it is only necessary that, at the time of data writing, a voltage drop is caused in a high resistance region. Therefore, the value of voltage applied to a gate electrode can be reduced as compared with a conventional device. In correspondence with the reduction in the value of applied voltage, it is possible to reduce the film thickness of a gate insulating film of memory transistors, and further the film thickness of the gate insulating film of a peripheral transistor for controlling the memory transistors. As a result, the circuit configuration of the non-volatile semiconductor memory device can be reduced in size as compared with the conventional device.