High-density power MOSFET with planarized metalization

Invention Grant

US09437729B2 High-density power MOSFET with planarized metalization 有权

Title translation: 具有平坦化金属化的高密度功率MOSFET

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Patent Title: High-density power MOSFET with planarized metalization
Patent Title (中): 具有平坦化金属化的高密度功率MOSFET
Application No.: US11651258

Application Date: 2007-01-08
Publication No.: US09437729B2

Publication Date: 2016-09-06
Inventor: Jian Li
Applicant: Jian Li
Applicant Address: US CA Santa Clara
Assignee: Vishay-Siliconix
Current Assignee: Vishay-Siliconix
Current Assignee Address: US CA Santa Clara
Main IPC: H01L21/3205
IPC: H01L21/3205 ; H01L29/78 ; H01L29/417 ; H01L21/306 ; H01L29/45

High-density power MOSFET with planarized metalization

Abstract:

A method for producing a power MOSFET. The method includes fabricating a plurality of layers of a power MOSFET to produce an upper surface active area and performing a chemical mechanical polishing process on the active area to produce a substantially planar surface. A metalization deposition process is then performed on the substantially planar surface and the fabrication of the power MOSFET is subsequently completed.

Abstract(Chinese):

一种功率MOSFET的制造方法。该方法包括制造功率MOSFET的多个层以产生上表面有源面积并且在有源区上执行化学机械抛光工艺以产生基本平坦的表面。然后在基本平坦的表面上执行金属化沉积工艺，随后完成功率MOSFET的制造。

Public/Granted literature

US20080164515A1 High-density power MOSFET with planarized metalization Public/Granted day:2008-07-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）