Invention Grant
- Patent Title: Field effect transistor
- Patent Title (中): 场效应晶体管
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Application No.: US14787443Application Date: 2014-05-16
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Publication No.: US09437726B2Publication Date: 2016-09-06
- Inventor: Tetsuzo Nagahisa , Shinichi Handa
- Applicant: SHARP KABUSHIKI KAISHA
- Applicant Address: JP Osaka
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Osaka
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2013-150544 20130719
- International Application: PCT/JP2014/063101 WO 20140516
- International Announcement: WO2015/008532 WO 20150122
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/778 ; H01L29/207 ; H01L29/205 ; H01L29/51 ; H01L29/10 ; H01L29/20 ; H01L29/417
Abstract:
In a field effect transistor, a carbon concentration in a buffer layer at the side closer to a high resistance layer is not less than 0.8×1019/cm3 and not more than 1.0×1021/cm3, a carbon concentration in the high resistance layer at the side closer to the buffer layer is not less than 3.7×1018/cm3 and not more than 1.0×1021/cm3, and a carbon concentration in the high resistance layer at the side closer to the channel layer is not less than 1.4×1019/cm3 and not more than 1.0×1021/cm3.
Public/Granted literature
- US20160118488A1 FIELD EFFECT TRANSISTOR Public/Granted day:2016-04-28
Information query
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