Invention Grant
US09437703B2 Non-volatile memory device including nano floating gate with nanoparticle and method for fabricating the same
有权
包括具有纳米颗粒的纳米浮动栅极的非易失性存储器件及其制造方法
- Patent Title: Non-volatile memory device including nano floating gate with nanoparticle and method for fabricating the same
- Patent Title (中): 包括具有纳米颗粒的纳米浮动栅极的非易失性存储器件及其制造方法
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Application No.: US14554937Application Date: 2014-11-26
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Publication No.: US09437703B2Publication Date: 2016-09-06
- Inventor: Jun-Hyung Kim
- Applicant: SK INNOVATION CO., LTD.
- Applicant Address: KR Seoul
- Assignee: SK INNOVATION CO., LTD.
- Current Assignee: SK INNOVATION CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: IP & T Group LLP
- Priority: KR10-2013-0159736 20131219
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/49 ; H01L21/28 ; H01L29/66 ; H01L29/423 ; H01L51/05
Abstract:
A non-volatile memory device includes a floating gate for charging and discharging of charges over a substrate. The floating gate comprises a linker layer formed over the substrate and including linkers to be bonded to metal ions and metallic nanoparticles formed out of the metal ions over the linker layer.
Public/Granted literature
- US20150179807A1 NON-VOLATILE MEMORY DEVICE INCLUDING NANO FLOATING GATE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-06-25
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