Invention Grant
- Patent Title: Method of forming nanowires
- Patent Title (中): 形成纳米线的方法
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Application No.: US14505631Application Date: 2014-10-03
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Publication No.: US09437699B2Publication Date: 2016-09-06
- Inventor: Yu-Lien Huang , Yung-Ta Li , Meng-Ku Chen
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: H01L21/335
- IPC: H01L21/335 ; H01L29/423 ; H01L29/78 ; H01L29/06 ; H01L21/3065 ; H01L21/02
Abstract:
According to another embodiment, a semiconductor structure is provided. The structure includes: a substrate; a first nanowire over the substrate; and a second nanowire over the substrate and substantially symmetric with the first nanowire.
Public/Granted literature
- US20160099328A1 METHOD OF FORMING NANOWIRES Public/Granted day:2016-04-07
Information query
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