Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US14617572Application Date: 2015-02-09
-
Publication No.: US09437669B2Publication Date: 2016-09-06
- Inventor: Hirofumi Harada , Masaru Akino
- Applicant: SEIKO INSTRUMENTS INC.
- Applicant Address: JP
- Assignee: SII SEMICONDUCTOR CORPORATION
- Current Assignee: SII SEMICONDUCTOR CORPORATION
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2014-025808 20140213
- Main IPC: H01L27/10
- IPC: H01L27/10 ; H01L49/02 ; H01L27/08
Abstract:
A semiconductor resistor circuit has resistor elements of a polycrystalline silicon thin film formed on an insulating film deposited on a semiconductor substrate. A high stress insulating film is formed on and covers the resistor elements and the insulating film exposed between the resistor elements. Metal wirings cover upper portions of the resistor elements. The high stress insulating film has a membrane stress that is higher than that of the metal wirings.
Public/Granted literature
- US20150228655A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-08-13
Information query
IPC分类:
