Invention Grant
US09437604B2 Methods and apparatuses having strings of memory cells including a metal source
有权
具有包括金属源的存储单元串的方法和装置
- Patent Title: Methods and apparatuses having strings of memory cells including a metal source
- Patent Title (中): 具有包括金属源的存储单元串的方法和装置
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Application No.: US14069553Application Date: 2013-11-01
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Publication No.: US09437604B2Publication Date: 2016-09-06
- Inventor: Zhenyu Lu , Roger W. Lindsay , Andrew Bicksler , Yongjun J Hu , Haitao Liu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L27/115 ; H01L29/66 ; H01L29/792
Abstract:
Methods for forming a string of memory cells, an apparatus having a string of memory cells, and a system are disclosed. A method for forming the string of memory cells comprises forming a metal silicide source material over a substrate. The metal silicide source material is doped. A vertical string of memory cells is formed over the metal silicide source material. A semiconductor material is formed vertically and adjacent to the vertical string of memory cells and coupled to the metal silicide source material.
Public/Granted literature
- US20150123188A1 METHODS AND APPARATUSES HAVING STRINGS OF MEMORY CELLS INCLUDING A METAL SOURCE Public/Granted day:2015-05-07
Information query
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