According to an embodiment, a nonvolatile semiconductor memory device comprises: a semiconductor layer; a first gate insulating film; a plurality of floating gate electrodes; a second gate insulating film; a plurality of control gate electrodes; and an upper insulating film. The semiconductor layer is provided on a substrate and extends in a first direction. The floating gate electrode is formed on the semiconductor layer via the first gate insulating film. The control gate electrode faces the upper surface of the floating gate electrode via the second gate insulating film. Moreover, the control gate electrode extends in a second direction intersecting the first direction. The upper insulating film is formed on an upper portion of the plurality of control gate electrodes. Moreover, a height of an upper surface of the upper insulating film changes along the second direction.