Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
- Patent Title (中): 半导体装置及半导体装置的制造方法
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Application No.: US14206345Application Date: 2014-03-12
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Publication No.: US09437596B2Publication Date: 2016-09-06
- Inventor: Junichi Ariyoshi
- Applicant: FUJITSU SEMICONDUCTOR LIMITED
- Applicant Address: JP Yokohama
- Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2013-068949 20130328
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8238 ; H01L21/265
Abstract:
A semiconductor device includes a substrate, a first well of a first conductivity type formed within the substrate, a second well of a second conductivity type formed underneath the first well within the substrate and a third well of the second conductivity type formed horizontally to the first well within the substrate, and including a first region formed to a first depth from a surface of the substrate, and a second region formed to a second depth greater than the first depth from the surface of the substrate and connected to the second well.
Public/Granted literature
- US20140291807A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-10-02
Information query
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