Invention Grant
- Patent Title: Stacked IC control through the use of homogenous region
- Patent Title (中): 堆叠IC控制通过使用均匀区域
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Application No.: US14316125Application Date: 2014-06-26
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Publication No.: US09437578B2Publication Date: 2016-09-06
- Inventor: Wen-I Hsu , Cheng-Ying Ho , Jeng-Shyan Lin , Feng-Chi Hung , Dun-Nian Yaung
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/48 ; H01L21/306 ; H01L27/146 ; H01L25/00 ; H01L21/768 ; H01L23/00
Abstract:
A package includes a semiconductor chip. The semiconductor chip includes a substrate, a plurality of dielectric layers underlying the substrate, a dielectric region penetrating through the plurality of dielectric layers, and a metal pad overlapped by the dielectric region. A conductive plug penetrates through the substrate, the dielectric region, and the metal pad.
Public/Granted literature
- US20150380385A1 STACKED IC CONTROL THROUGH THE USE OF HOMOGENOUS REGION Public/Granted day:2015-12-31
Information query
IPC分类:
