Invention Grant
- Patent Title: Semiconductor device and method for manufacturing thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14136977Application Date: 2013-12-20
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Publication No.: US09437573B2Publication Date: 2016-09-06
- Inventor: Naomi Masuda , Masataka Hoshino , Ryota Fukuyama
- Applicant: Cypress Semiconductor Corporation
- Applicant Address: US CA San Jose
- Assignee: CYPRESS SEMICONDUCTOR CORPORATION
- Current Assignee: CYPRESS SEMICONDUCTOR CORPORATION
- Current Assignee Address: US CA San Jose
- Agency: Lowenstein Sandler LLP
- Priority: JP2007-273655 20071022
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H01L25/00

Abstract:
A semiconductor device which includes a first semiconductor chip 10, a first electrode 12 formed on the first semiconductor chip 10, a second semiconductor chip 20 to which the first semiconductor chip 10 is mounted, a second electrode 22 with a protrusion 24, which is formed on the second semiconductor chip 20, and a solder bump 14 which bonds the first electrode 12 and the second electrode 22 to cover at least a part of a side surface of the protrusion 24, and a method for manufacturing thereof are provided.
Public/Granted literature
- US20140113411A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF Public/Granted day:2014-04-24
Information query
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