Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14680910Application Date: 2015-04-07
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Publication No.: US09437556B2Publication Date: 2016-09-06
- Inventor: Hisashi Ishiguro
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2014-078849 20140407
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L23/544 ; H01L23/02 ; H01L23/58 ; H01L23/528 ; H01L23/00 ; H01L23/522

Abstract:
The reliability of a semiconductor device is improved. Further, miniaturization of the semiconductor device is attained. A sealring is formed in a wiring structure provided over a semiconductor substrate. The sealring has a structure in which sealring wirings respectively formed in a plurality of wiring layers included in the wiring structure are laminated. The position of a side surface on the inner peripheral side of a sealring wiring formed in the wiring layer at the uppermost layer in the wiring layers is located more outside than the position of a side surface on the inner peripheral side of a sealring wiring formed in the wiring layer located one layer lower than the wiring layer at the uppermost layer. The width of the sealring wiring at the uppermost layer is smaller than the width of the sealring wiring located one layer lower than the wiring layer at the uppermost layer.
Public/Granted literature
- US20150287684A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-10-08
Information query
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