Invention Grant
US09437540B2 Additional etching to increase via contact area 有权
附加蚀刻以通过接触面积增加

Additional etching to increase via contact area
Abstract:
An integrated circuit structure includes a dielectric layer, and a conductive line in the dielectric layer. The conductive line has a first top surface and a second top surface lower than the first top surface, and a sidewall connecting the first top surface to the second top surface. A via includes a portion overlying the second top surface of the conductive line. The via is electrically coupled to the conductive line through the second top surface and the sidewall of the conductive line.
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