Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13571524Application Date: 2012-08-10
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Publication No.: US09437537B2Publication Date: 2016-09-06
- Inventor: Hyun Sub Kim , Sung Bo Shim
- Applicant: Hyun Sub Kim , Sung Bo Shim
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2012-0039712 20120417
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/522 ; H01L21/033 ; H01L21/3213
Abstract:
A semiconductor device including conductive lines configured to include first lines extending generally in parallel in a first direction and second lines extending generally in parallel in a second direction to intersect the first direction from the respective ends of the first lines and each second line having a width wider than the first line, and dummy patterns formed between the second lines.
Public/Granted literature
- US20130270716A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-10-17
Information query
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