Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14730651Application Date: 2015-06-04
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Publication No.: US09437461B2Publication Date: 2016-09-06
- Inventor: Makoto Higashidate
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-shi
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2014-156177 20140731
- Main IPC: H01L23/10
- IPC: H01L23/10 ; H01L21/48 ; H01L23/373 ; H01L23/36 ; H01L23/00 ; H01L25/07

Abstract:
Aspects of the invention include a semiconductor device that enables both solder-outflow prevention and inhibition of seizures coming from laser processing residues. A semiconductor device can include a semiconductor chip, a plurality of insulating substrates on each of which the semiconductor chip is fixed, a heat sink having a plurality of first grooves surrounding each one of more than one predetermined arrangement area. The plurality of insulating substrates can be arranged at each of the predetermined areas, and a plurality of second grooves surrounding the first groove, wherein the second grooves are shallower in depth than each of the first grooves, and solder filled between the insulating substrate and the arrangement area on the heat sink.
Public/Granted literature
- US20160035643A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-02-04
Information query
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