Invention Grant
US09437444B2 Semiconductor device having hard mask structure and fine pattern and forming method thereof
有权
具有硬掩模结构和精细图案的半导体器件及其形成方法
- Patent Title: Semiconductor device having hard mask structure and fine pattern and forming method thereof
- Patent Title (中): 具有硬掩模结构和精细图案的半导体器件及其形成方法
-
Application No.: US14062563Application Date: 2013-10-24
-
Publication No.: US09437444B2Publication Date: 2016-09-06
- Inventor: Sung-Kwon Lee , Jun-Hyeub Sun , Ho-Jin Jung , Chun-Hee Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2013-0048544 20130430
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/308 ; H01L21/033
Abstract:
A method for fabricating a semiconductor device includes forming a plurality of first hard mask patterns separated by a plurality of trenches on a target layer, forming a plurality of second hard mask patterns filling the plurality of trenches, forming a plurality of first opening units in the plurality of second hard mask patterns, forming a plurality of second opening units in the plurality of first hard mask patterns and forming a plurality of patterns using the plurality of first opening units and the plurality of second opening units, which are transferred by etching the target layer.
Public/Granted literature
- US20140322915A1 SEMICONDUCTOR DEVICE HAVING HARD MASK STRUCTURE AND FINE PATTERN AND FORMING METHOD THEREOF Public/Granted day:2014-10-30
Information query
IPC分类:
