Invention Grant
- Patent Title: Method for producing semiconductor device by plating processing
- Patent Title (中): 通过电镀处理制造半导体器件的方法
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Application No.: US14177770Application Date: 2014-02-11
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Publication No.: US09437437B2Publication Date: 2016-09-06
- Inventor: Satoshi Wakatsuki , Atsuko Sakata
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2013-179593 20130830
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/283 ; H01L21/288 ; H01L45/00 ; H01L27/24
Abstract:
According to one embodiment, a method for producing a semiconductor device includes forming a base film above a semiconductor substrate, forming a core above the base film, forming a side wall film on a side face of the core, and replacing at least part of the side wall film with a metal film by performing plating processing.
Public/Granted literature
- US20150064901A1 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE Public/Granted day:2015-03-05
Information query
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