Invention Grant
- Patent Title: Nonvolatile memory device, memory system having the same, external power controlling method thereof
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Application No.: US14835230Application Date: 2015-08-25
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Publication No.: US09437317B2Publication Date: 2016-09-06
- Inventor: TaeHyun Kim , June-Hong Park , Sungwhan Seo , Jinyub Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeinggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeinggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0005920 20130118
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/30 ; G11C16/12
Abstract:
An external power control method includes determining whether to apply a second external voltage to a first node according to a drop of a first external voltage; generating a flag signal according to a drop of the second external voltage when the second external voltage is applied to the first node; transferring a voltage of the first node to a second node in response to the flag signal; and discharging at least one voltage of an internal circuit connected to the second node in response to the flag signal.
Public/Granted literature
- US20150364204A1 NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM HAVING THE SAME, EXTERNAL POWER CONTROLLING METHOD THEREOF Public/Granted day:2015-12-17
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