Invention Grant
- Patent Title: Semiconductor storage device
- Patent Title (中): 半导体存储设备
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Application No.: US14847365Application Date: 2015-09-08
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Publication No.: US09437283B2Publication Date: 2016-09-06
- Inventor: Yuichiro Ishii
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2014-183300 20140909
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/419 ; G11C11/412 ; G11C7/20

Abstract:
The disclosed invention provides a semiconductor storage device that creates no trouble, independently of power-on sequence. A semiconductor storage device includes a first power supply for the memory cells, a second power supply which is turned on independently of the first power supply and provided for a peripheral circuit which is electrically coupled to the memory cells, and a word line level fixing circuit for fixing the level of the word lines, which operates in accordance with turn-on of the first power supply. The word line level fixing circuit includes multiple level fixing transistors which are provided to correspond respectively to the word lines and provided between one of the word lines and a fixed potential and a level fixing control circuit which controls the level fixing transistors in accordance with input of a signal responding to turn-on of the second power supply.
Public/Granted literature
- US20160071576A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2016-03-10
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