Invention Grant
- Patent Title: Memory operation latency control
- Patent Title (中): 内存操作延迟控制
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Application No.: US15055329Application Date: 2016-02-26
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Publication No.: US09437264B2Publication Date: 2016-09-06
- Inventor: Chun-Hsiung Hung , Han-Sung Chen , Ming-Chao Lin
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Main IPC: G11C8/08
- IPC: G11C8/08 ; G11C16/30 ; G11C7/22

Abstract:
An integrated circuit with memory can operate with reduced latency between consecutive operations such as read operations. At a first time, a first operation command is finished on a memory array on an integrated circuit. At a second time, a second operation command is begun on the memory array. A regulated output voltage from the charge pump is coupled to word lines in the memory array. From the first time to the second time, a regulated output voltage is maintained at about a word line operation voltage such as a read voltage.
Public/Granted literature
- US20160180903A1 MEMORY OPERATION LATENCY CONTROL Public/Granted day:2016-06-23
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