A structure, method and system for complementary strain fill for integrated circuit chips. The structure includes a first region of an integrated circuit having multiplicity of n-channel and p-channel field effect transistors (FETs); a first stressed layer over n-channel field effect transistors (NFETs) of the first region, the first stressed layer of a first stress type; a second stressed layer over p-channel field effect transistors (PFETs) of the first region, the second stressed layer of a second stress type, the second stress type opposite from the first stress type; and a second region of the integrated circuit, the second region not containing FETs, the second region containing first sub-regions of the first stressed layer and second sub-regions of the second stressed layer.