Invention Grant
- Patent Title: Non-volatile memory storage for multi-channel memory system
- Patent Title (中): 用于多通道存储系统的非易失性存储器
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Application No.: US14302292Application Date: 2014-06-11
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Publication No.: US09436600B2Publication Date: 2016-09-06
- Inventor: Hyun Lee
- Applicant: Netlist, Inc.
- Applicant Address: KR Seocho-gu
- Assignee: SVIC No. 28 New Technology Business Investment L.L.P.
- Current Assignee: SVIC No. 28 New Technology Business Investment L.L.P.
- Current Assignee Address: KR Seocho-gu
- Agency: Nixon Peabody LLP
- Agent Khaled Shami
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F12/08

Abstract:
A memory system that has a multi-channel volatile memory subsystem is coupled to a non-volatile memory subsystem to provide independent, configurable backup of data. The volatile memory subsystem has one or more main memory modules that use a form of volatile memory such as DRAM memory, for which the NV subsystem provides selective persistent backup. The main memory modules are dual in-line memory modules or DIMMs using DDR SDRAM memory devices. The non-volatile memory subsystem (NV backup) includes an NV controller and non-volatile memory NVM. The NV backup can also include a memory cache to aid with handling and storage of data. In certain embodiments, the NV controller and the non-volatile memory are coupled to the one or more DIMM channels of the main memory via associated signal lines. Such signal lines can be, for example, traces on a motherboard, and may include one or more signal buses for conveying data, address, and/or control signals. The NV controller and the non-volatile memory can be mounted on the motherboard.
Public/Granted literature
- US20140365715A1 NON-VOLATILE MEMORY STORAGE FOR MULTI-CHANNEL MEMORY SYSTEM Public/Granted day:2014-12-11
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