Invention Grant
- Patent Title: Semiconductor apparatus and retaining voltage levels
- Patent Title (中): 半导体装置和保持电压电平
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Application No.: US14244413Application Date: 2014-04-03
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Publication No.: US09436246B2Publication Date: 2016-09-06
- Inventor: Jong Sam Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2013-0157380 20131217
- Main IPC: G05F1/45
- IPC: G05F1/45 ; G06F1/26 ; G11C5/14
Abstract:
A semiconductor apparatus includes a reference voltage generation unit configured to generate a reference voltage. The semiconductor apparatus also includes an internal voltage generation unit configured to generate an internal voltage which corresponds to a voltage level of the reference voltage. In addition, the semiconductor apparatus includes a noise generation unit configured to generate noise in the reference voltage according to noise of the internal voltage.
Public/Granted literature
- US20150168966A1 SEMICONDUCTOR APPARATUS AND RETAINING VOLTAGE LEVELS Public/Granted day:2015-06-18
Information query
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