Invention Grant
- Patent Title: Stripping solution for photolithography and pattern formation method
- Patent Title (中): 剥离溶液用于光刻和图案形成方法
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Application No.: US14026407Application Date: 2013-09-13
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Publication No.: US09436094B2Publication Date: 2016-09-06
- Inventor: Naohisa Ueno , Daijiro Mori , Takayuki Haraguchi
- Applicant: Tokyo Ohka Kogyo Co., Ltd.
- Applicant Address: JP Kawasaki-Shi
- Assignee: TOKYO OHKA KOGYO CO., LTD.
- Current Assignee: TOKYO OHKA KOGYO CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: JP2012-210007 20120924
- Main IPC: G03F7/42
- IPC: G03F7/42
Abstract:
A stripping solution for photolithography which can effectively strip away residual materials of a photoresist pattern and etching residual materials, and has excellent anticorrosion properties on SiO2 and a variety of metal materials; and a method for forming a pattern using the stripping solution. A prescribed basic compound is used as a counter amine of the hydrofluoric acid contained in the stripping solution for photolithography, and the stripping solution for photolithography is adjusted to a pH measured at 23° C. of not more than 6.0 or 8.5 or more.
Public/Granted literature
- US20140087313A1 STRIPPING SOLUTION FOR PHOTOLITHOGRAPHY AND PATTERN FORMATION METHOD Public/Granted day:2014-03-27
Information query
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