Invention Grant
- Patent Title: Pattern forming process and shrink agent
- Patent Title (中): 图案成型工艺和收缩剂
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Application No.: US14930772Application Date: 2015-11-03
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Publication No.: US09436093B2Publication Date: 2016-09-06
- Inventor: Jun Hatakeyama , Masayoshi Sagehashi
- Applicant: SHIN-ETSU CHEMICAL CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2014-223972 20141104
- Main IPC: G03F7/40
- IPC: G03F7/40 ; G03F7/30 ; G03F7/32 ; G03F7/38 ; G03F7/20 ; G03F7/039

Abstract:
A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units capable of forming lactam under the action of acid in a C7-C16 ester or C7-C16 ketone solvent, baking the coating, and removing the excessive shrink agent via organic solvent development for thereby shrinking the size of spaces in the pattern.
Public/Granted literature
- US20160124312A1 PATTERN FORMING PROCESS AND SHRINK AGENT Public/Granted day:2016-05-05
Information query
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