Invention Grant
US09435696B2 Temperature sensor circuit and semiconductor device including temperature sensor circuit
有权
温度传感器电路和半导体器件包括温度传感器电路
- Patent Title: Temperature sensor circuit and semiconductor device including temperature sensor circuit
- Patent Title (中): 温度传感器电路和半导体器件包括温度传感器电路
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Application No.: US13873550Application Date: 2013-04-30
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Publication No.: US09435696B2Publication Date: 2016-09-06
- Inventor: Jun Koyama , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2012-105460 20120502
- Main IPC: G01K7/01
- IPC: G01K7/01

Abstract:
To provide a highly accurate temperature sensor circuit. The temperature sensor circuit includes a first constant current circuit; a first diode in which a first voltage reflecting the temperature of an object to be detected is generated between an anode and a cathode in accordance with a first current supplied from the first constant current circuit; a second constant current circuit; a second diode which includes an oxide semiconductor and in which a second voltage is generated between an anode and a cathode in accordance with a second current supplied from the second constant current circuit; and an amplifier circuit which amplifies a difference between the first voltage and the second voltage.
Public/Granted literature
- US20130294481A1 TEMPERATURE SENSOR CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING TEMPERATURE SENSOR CIRCUIT Public/Granted day:2013-11-07
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