Invention Grant
US09414512B2 Substrate for power module, substrate with heat sink for power module, power module, method for producing substrate for power module, and method for producing substrate with heat sink for power module
有权
功率模块用基板，功率模块用散热片基板，功率模块，功率模块用基板的制造方法以及功率模块用散热片基板的制造方法
- Patent Title: Substrate for power module, substrate with heat sink for power module, power module, method for producing substrate for power module, and method for producing substrate with heat sink for power module
- Patent Title (中): 功率模块用基板，功率模块用散热片基板，功率模块，功率模块用基板的制造方法以及功率模块用散热片基板的制造方法
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Application No.: US13503126Application Date: 2010-10-19
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Publication No.: US09414512B2Publication Date: 2016-08-09
- Inventor: Yoshiyuki Nagatomo , Kazuhiro Akiyama , Hiroshi Tonomura , Nobuyuki Terasaki , Yoshirou Kuromitsu
- Applicant: Yoshiyuki Nagatomo , Kazuhiro Akiyama , Nobuyuki Terasaki , Yoshirou Kuromitsu
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Agent James E. Armstrong, IV; Brian S. Matross
- Priority: JPP2009-243259 20091022; JPP2010-045747 20100302; JPP2010-091366 20100412; JPP2010-217590 20100928; JPP2010-217591 20100928
- International Application: PCT/JP2010/068332 WO 20101019
- International Announcement: WO2011/049067 WO 20110428
- Main IPC: H05K7/02
- IPC: H05K7/02 ; H05K13/00 ; H05K7/20 ; H01L23/373 ; H01L23/473 ; C04B35/645 ; C04B37/02 ; H01L21/48
Abstract:
Provided is a power module substrate including a ceramic substrate, and a metal plate which contains aluminum or an aluminum alloy, and which is stacked and bonded on a surface of the ceramic substrate, wherein one or more additional elements selected from Ag, Zn, Ge, Mg, Ca, Ga, and Li are solid-solubilized in the metal plate, and the Ag concentration in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.05% by mass and less than or equal to 10% by mass, or the total concentration of Zn, Ge, Mg, Ca, Ga, and Li in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.01% by mass and less than or equal to 5% by mass.
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