Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14738850Application Date: 2015-06-13
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Publication No.: US09412878B2Publication Date: 2016-08-09
- Inventor: Koji Ogata , Yoshiyuki Kawashima , Hiraku Chakihara , Tomohiro Hayashi
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2014-133852 20140630
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L27/115 ; H01L29/792 ; H01L29/66 ; H01L29/51 ; H01L21/28 ; H01L21/02 ; H01L21/265 ; H01L29/06 ; H01L29/08 ; H01L29/423
Abstract:
A semiconductor device having improved reliability is disclosed. In a semiconductor device according to one embodiment, an element isolation region extending in an X direction has a crossing region that crosses, in plan view, a memory gate electrode extending in a Y direction that intersects with the X direction at right angles. In this case, in the crossing region, a width in the Y direction of one edge side, the one edge side being near to a source region, is larger than a width in the Y direction of the other edge side, the other edge side being near to a control gate electrode.
Public/Granted literature
- US20150380425A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-12-31
Information query
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