Invention Grant
- Patent Title: Semiconductor device having structure capable of suppressing oxygen diffusion and method of manufacturing the same
- Patent Title (中): 具有能够抑制氧扩散的结构的半导体装置及其制造方法
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Application No.: US14616856Application Date: 2015-02-09
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Publication No.: US09412861B2Publication Date: 2016-08-09
- Inventor: HoonJung Oh , DaeHong Ko , SangMo Koo , InGeun Lee , Hwan Lee , DaeSub Byun , HyunCheol Jang
- Applicant: Industry-Academic Cooperation Foundation, Yonsei University
- Applicant Address: KR Seoul
- Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
- Current Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
- Current Assignee Address: KR Seoul
- Agency: Lex IP Meister, PLLC
- Priority: KR10-2014-0015458 20140211
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/78 ; H01L21/02 ; H01L21/285 ; H01L29/51 ; H01L21/28
Abstract:
A semiconductor device is provided. The device includes a substrate; a gate dielectric film formed on the substrate; a gate electrode formed on the gate dielectric film, and source and drain electrodes, wherein a boundary between the gate dielectric film and the substrate is formed with an F (fluorine)-terminated surface to serve as a barrier for preventing oxygen diffusion.
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