Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14688031Application Date: 2015-04-16
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Publication No.: US09412830B2Publication Date: 2016-08-09
- Inventor: Kozo Makiyama , Shirou Ozaki
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2014-085621 20140417; JP2015-040411 20150302
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L29/66 ; H01L21/02 ; H01L21/311 ; H01L21/033 ; H01L29/778 ; H01L29/20 ; H01L29/423
Abstract:
A semiconductor device includes a first semiconductor layer made of a nitride semiconductor and formed on a substrate, a second semiconductor layer made of a material including InAlN and formed on the first semiconductor layer, an insulator layer formed by an oxidized surface part of the second semiconductor layer, a gate electrode formed on the insulator layer, and a source electrode and a drain electrode respectively formed on the first or second semiconductor layer.
Public/Granted literature
- US20150303291A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2015-10-22
Information query
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