Invention Grant
US09412810B2 Super-junction trench MOSFETs with closed cell layout having shielded gate
有权
具有封闭电池布局的超结沟槽MOSFET具有屏蔽栅极
- Patent Title: Super-junction trench MOSFETs with closed cell layout having shielded gate
- Patent Title (中): 具有封闭电池布局的超结沟槽MOSFET具有屏蔽栅极
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Application No.: US14592223Application Date: 2015-01-08
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Publication No.: US09412810B2Publication Date: 2016-08-09
- Inventor: Fu-Yuan Hsieh
- Applicant: Force Mos Technology Co., Ltd.
- Applicant Address: TW
- Assignee: FORCE MOS TECHNOLOGY CO., LTD.
- Current Assignee: FORCE MOS TECHNOLOGY CO., LTD.
- Current Assignee Address: TW
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/423 ; H01L29/10 ; H01L29/49 ; H01L29/417 ; H01L23/535
Abstract:
A super-junction trench MOSFET with closed cell layout having shielded gate is disclosed, wherein closed gate trenches surrounding a deep trench in each unit cell and the shielded gate disposed in the deep trench. Trenched source-body contacts are at least formed between the closed gate trenches and the deep trench. The deep trench has square, rectangular, circle or hexagon shape.
Public/Granted literature
- US20160163789A1 SUPER-JUNCTION TRENCH MOSFETS WITH CLOSED CELL LAYOUT HAVING SHIELDED GATE Public/Granted day:2016-06-09
Information query
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