An electrically adjustable memory effect resistor comprises a stack comprising a superconductive material extending along an axis, a ferroelectric material and a conductive third material. The adjustable resistor comprises a means for controlling electrical voltage allowing an electric field to be generated between the superconductive material and the conductive material allowing the polarization direction of the ferroelectric second material to be modified. The adjustable resistor furthermore comprises an electrically insulating material placed between the ferroelectric material and the conductive material, the thickness of the insulating material varying in a direction parallel to the axis—so as to cause a variation in the electric field applied between the first layer and the third layer.