A semiconductor storage device according to an embodiment comprises a plurality of column power supply lines and a plurality of row power supply lines. A plurality of resistance-change memory cells are connected to the column power supply lines and the row power supply lines, respectively. A first column driver supplies a current to a first column power supply line among the column power supply lines. A second column driver supplies a current to a second column power supply line among the column power supply lines. In a data write operation, the first and second column drivers apply voltages having opposite polarities to the first and second column power supply lines, respectively. One of the first and second column drivers supplies a current to relevant ones of the memory cells and other thereof receives the current having passed through the memory cells.