A memory device includes a plurality of sense amplifiers coupled with an array of memory cells, a plurality of output data lines receiving outputs of corresponding sense amplifiers, and a plurality of precharge circuits configured to apply a precharge voltage on the output data lines. A controller provides control signals to the sense amplifiers and to the precharge circuits, including to cause the precharge circuits to precharge the output data lines before the sense amplifiers drive output data signals to the output data lines. The plurality of sense amplifiers includes banks of sense amplifiers, and each bank includes a sense amplifier having an output driving each output data line. The memory device includes data output multiplexers having inputs coupled to the output data lines, and the precharge circuits are coupled to the output data lines between outputs of the sense amplifiers and the data output multiplexers.