Invention Grant
- Patent Title: Method of fabricating silicon carbide powder
- Patent Title (中): 制造碳化硅粉末的方法
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Application No.: US14129222Application Date: 2012-06-25
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Publication No.: US09409782B2Publication Date: 2016-08-09
- Inventor: Byung Sook Kim , Jung Eun Han
- Applicant: Byung Sook Kim , Jung Eun Han
- Applicant Address: KR Seoul
- Assignee: LG INNOTEK CO., LTD.
- Current Assignee: LG INNOTEK CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Saliwanchik, Lloyd & Eisenschenk
- Priority: KR10-2011-0061633 20110624
- International Application: PCT/KR2012/004992 WO 20120625
- International Announcement: WO2012/177098 WO 20121227
- Main IPC: C01B31/36
- IPC: C01B31/36 ; C01B31/30 ; C01B33/00 ; C04B35/573 ; B82Y30/00

Abstract:
A method of fabricating silicon carbide powder according to the embodiment comprises the steps of preparing a mixture by mixing a silicon source comprising silicon with a carbon source comprising a solid carbon source or an organic carbon compound; reacting the mixture; and controlling the reacting of the mixture, wherein the step of controlling the reacting comprises a step of supplying process gas or reaction product gas.
Public/Granted literature
- US20140127115A1 METHOD OF FABRICATING SILICON CARBIDE POWDER Public/Granted day:2014-05-08
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